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MT3S12FS PDF даташит

Спецификация MT3S12FS изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «Silicon NPN Epitaxial Planar Type Transistor».

Детали детали

Номер произв MT3S12FS
Описание Silicon NPN Epitaxial Planar Type Transistor
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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MT3S12FS Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S12FS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
MT3S12FS
Unit : mm
Superior performance in oscillator applications
Superior noise characteristics
:NF = 1.7 dB, |S21e|2 = 4.5 dB (f =2GHz)
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC(Note)
Tj
Tstg
Rating
13
6
1.5
40
10
85
125
55~125
Unit
V
V
V
mA
mW
mW
°C
°C
0.1±0.05
1.BASE
2.EMITTER
3.COLLECOTR
fSM
JEDEC
JEITA
TOSHIBA
2-1E1A
Weight: 0.0006g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Marking
2
3 09
1
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MT3S12FS Даташит, Описание, Даташиты
Microwave Characteristics (Ta = 25°C)
Characteristic
Transition frequency
Insertion gain
Noise figure
Symbol
Condition
fT
S21e2 (1)
S21e2 (2)
NF
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Collector cutoff current
Emitter cutoff current
DC current gain
Reverse transfer capacitance
ICBO
IEBO
hFE
Cre
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz(Note)
Note: Cre is measured with a three-terminal method using a capacitance bridge.
MT3S12FS
Min Typ. Max Unit
5 7 GHz
4.5
dB
4.5 7
1.7 2.5 dB
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 1 μA
100 160
0.7 0.95 pF
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
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MT3S12FS Даташит, Описание, Даташиты
MT3S12FS
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN GENERAL
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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Номер в каталогеОписаниеПроизводители
MT3S12FSSilicon NPN Epitaxial Planar Type TransistorToshiba Semiconductor
Toshiba Semiconductor

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