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TMP5N60AZ PDF даташит

Спецификация TMP5N60AZ изготовлена ​​​​«TRinno» и имеет функцию, называемую «N-channel MOSFET».

Детали детали

Номер произв TMP5N60AZ
Описание N-channel MOSFET
Производители TRinno
логотип TRinno логотип 

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TMP5N60AZ Даташит, Описание, Даташиты
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
TMP5N60AZ(G)/TMPF5N60AZ(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
4.2A
< 2.1W
Device
TMP5N60AZ / TMPF5N60AZ
TMP5N60AZG / TMPF5N60AZG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP5N60AZ / TMPF5N60AZ
TMP5N60AZG / TMPF5N60AZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP5N60AZ(G) TMPF5N60AZ(G)
600
±30
4.2 4.2 *
2.71 2.71 *
16.8 16.8 *
217
4.2
9.84
98.4 32.8
0.787
0.263
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP5N60AZ(G)
1.27
62.5
October 2012 : Rev0
www.trinnotech.com
TMPF5N60AZ(G)
3.8
62.5
Unit
/W
/W
1/7









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TMP5N60AZ Даташит, Описание, Даташиты
TMP5N60AZ(G)/TMPF5N60AZ(G)
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 600 --
--
V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
3
--
5
V
RDS(on)
VGS = 10 V, ID = 2.1 A
-- 1.7 2.1 W
gFS VDS = 30 V, ID = 2.1 A -- 5 -- S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 658 --
-- 72 --
-- 9 --
pF
pF
pF
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
VDD = 300 V, ID = 4.2 A,
--
19
--
ns
tr RG = 25 , VGS = 10 V -- 25 -- ns
td(off)
-- 34 -- ns
tf -- 19 -- ns
Qg
VDS = 480 V, ID = 4.2 A,
--
14
--
nC
Qgs
VGS = 10 V
-- 3 -- nC
Qgd -- 7 -- nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 4.2 A
VGS = 0 V, IS = 4.2 A
dIF / dt = 100 A/µs
-- -- 4.2 A
-- -- 16.8 A
-- -- 1.5 V
-- 283 --
ns
-- 1.6 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=22.6mH, I AS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD 4.2A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
October 2012 : Rev0
www.trinnotech.com
2/7









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TMP5N60AZ Даташит, Описание, Даташиты
TMP5N60AZ(G)/TMPF5N60AZ(G)
10
Top V =15.0V
GS
10.0V
9.0V
8 8.0V
7.0V
6.0V
Bottom 5.5V
6
4
2
1. T = 25
C
2. 250μs Pulse Test
0
0 5 10 15 20
Drain-Source Voltage, V [V]
DS
V = 30V
DS
250 μs Pulse Test
10
150
25
1
-55
0.1
2468
Gate-Source Voltage, V [V]
GS
3.0
T = 25
J
2.5
2.0
1.5
1.0
0
2
V = 10V
GS
V = 20V
GS
16
V = 0V
GS
250μs Pulse Test
12
8 150
25
4
46
Drain Current,I [A]
D
8
0
10 0.0
0.5 1.0 1.5
Source-Drain Voltage, V [V]
SD
10
2.0
1200
1000
800
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
V =0V
GS
C
iss
f = 1 MHz
12
I = 4.2A
D
10
8
600 C
oss
400
C
rss
200
6
4
2
0
10-1 100 101
Drain-Source Voltage, V [V]
DS
October 2012 : Rev0
0
0
www.trinnotech.com
V = 300V
DS
V = 120V
DS
V = 480V
DS
4 8 12
Total Gate Charge, Q [nC]
G
16
3/7










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