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TSHA6503 PDF даташит

Спецификация TSHA6503 изготовлена ​​​​«Vishay» и имеет функцию, называемую «Infrared Emitting Diode».

Детали детали

Номер произв TSHA6503
Описание Infrared Emitting Diode
Производители Vishay
логотип Vishay логотип 

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TSHA6503 Даташит, Описание, Даташиты
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
94 8389
DESCRIPTION
The TSHA650. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA6500
Ie (mW/sr)
20
TSHA6501
25
TSHA6502
30
TSHA6503
35
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 24
± 24
± 24
± 24
λP (nm)
875
875
875
875
ORDERING INFORMATION
ORDERING CODE
TSHA6500
TSHA6501
TSHA6502
TSHA6503
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
TEST CONDITION
tp/T = 0.5, tp = 100 µs
tp = 100 µs
SYMBOL
VR
IF
IFM
IFSM
PV
tr (ns)
600
600
600
600
PACKAGE FORM
T-1¾
T-1¾
T-1¾
T-1¾
VALUE
5
100
200
2.5
180
UNIT
V
mA
mA
A
mW
www.vishay.com
166
For technical questions, contact: [email protected]
Document Number: 81022
Rev. 1.7, 05-Sep-08









No Preview Available !

TSHA6503 Даташит, Описание, Даташиты
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
875 nm, GaAlAs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
°C
°C
°C
°C
K/W
200
180
160
140
120 RthJA = 230 K/W
100
80
60
40
20
0
0
21142
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Temperature coefficient of φe
Angle of half intensity
IF = 100 mA, tp = 20 ms
IF = 100 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
Virtual source diameter
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
Note
Tamb = 25 °C, unless otherwise specified
120
100
80
RthJA = 230 K/W
60
40
20
0
0
21143
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
SYMBOL
VF
TKVF
IR
Cj
TKφe
ϕ
λp
Δλ
TKλp
tr
tr
tf
tf
d
MIN.
TYP.
1.5
- 1.6
20
- 0.7
± 24
875
80
0.2
600
300
600
300
2.2
MAX.
1.8
100
UNIT
V
mV/K
µA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Document Number: 81022
Rev. 1.7, 05-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
167









No Preview Available !

TSHA6503 Даташит, Описание, Даташиты
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
875 nm, GaAlAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
IF = 1.5 A, tp = 100 µs
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
Radiant power
IF = 100 mA, tp = 20 ms
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
PART
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
SYMBOL
VF
VF
VF
VF
Ie
Ie
Ie
Ie
Ie
Ie
Ie
Ie
φe
φe
φe
φe
MIN.
12
16
20
24
150
200
250
300
TYP.
3.2
3.2
3.2
3.2
20
25
30
35
240
300
360
420
22
23
24
25
MAX.
4.9
4.9
4.5
4.5
60
60
60
60
UNIT
V
V
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
mW
101
IFSM = 2.5 A (Single Pause)
t p/T= 0.01
100 0.05
0.1
0.2
0.5
10-1
10-2
94 8003
10-1
100 101
t p - Pulse Duration (ms)
102
Fig. 3 - Pulse Forward Current vs. Pulse Duration
104
tp = 100 µs
t /T= 0.001
103 p
102
101
0
94 8005
1 23
VF - Forward Voltage (V)
4
Fig. 4 - Forward Current vs. Forward Voltage
www.vishay.com
168
For technical questions, contact: [email protected]
Document Number: 81022
Rev. 1.7, 05-Sep-08










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