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PJU5NA80 PDF даташит

Спецификация PJU5NA80 изготовлена ​​​​«Pan Jit International» и имеет функцию, называемую «800V N-Channel MOSFET».

Детали детали

Номер произв PJU5NA80
Описание 800V N-Channel MOSFET
Производители Pan Jit International
логотип Pan Jit International логотип 

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PJU5NA80 Даташит, Описание, Даташиты
PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80
800V N-Channel MOSFET
Voltage
800 V Current
5A
Features
RDS(ON), VGS@10V,ID@ 2.5A<2.7Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams
TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.067 ounces, 2 grams
ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
ITO-220AB-F
TO-220AB
TO-252AA
TO-251AA
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TO-251AA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC
Derate above 25oC
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
VDS
VGS
ID
IDM
EAS
PD
TJ,TSTG
RθJC
RθJA
140
1.12
0.89
110
TO-220AB ITO-220AB-F TO-252AA UNITS
800
+30
5
20
323
146 48
1.17
0.38
140
1.12
V
V
A
A
mJ
W
W/ oC
-55~150
oC
0.86
2.6
0.89
oC/W
62.5 120 110
Limited only By Maximum Junction Temperature
March 10,2014-REV.00
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PJU5NA80 Даташит, Описание, Даташиты
PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TEST CONDITION
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic (Note 4)
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VGS=10V,ID=2.5A
VDS=800V,VGS=0V
VGS=+30V,VDS=0V
IS=5A,VGS=0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=640V, ID=5A,
VGS=10V (Note 2,3)
VDS=25V, VGS=0V,
f=1.0MHZ
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
td(on)
tr
td(off)
tf
VDD=400V, ID=5A,
RG=25Ω
(Note 2,3)
Maximum Continuous Drain-Source
Diode Forward Current
IS
---
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
---
Reverse Recovery Time
Reverse Recovery Charge
trr VGS=0V, IS=5A
Qrr dIF/ dt=100A/us (Note 2)
NOTES :
1. L=30mH, IAS=4.6A, VDD=50V, RG=25 ohm, Starting TJ=25oC
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. Guaranteed by design, not subject to production testing
MIN. TYP. MAX. UNITS
800 - - V
234V
- 2.2 2.7 Ω
- 0.01 1
uA
- +10 +100 nA
- 0.89 1.4 V
- 17 -
- 4.6 -
- 7.4 -
- 660 -
- 78 -
- 2.8 -
- 12 -
- 28 -
- 31 -
- 27 -
nC
pF
ns
- - 5A
- - 20 A
- 550 -
-3-
ns
uC
March 10,2014-REV.00
Page 2









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PJU5NA80 Даташит, Описание, Даташиты
PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistsnce vs. Junction temperature
Fig.5 Capacitance vs. Drain-Source Voltage
March 10,2014-REV.00
Fig.6 Body Dlode Characterlslcs
Page 3










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Номер в каталогеОписаниеПроизводители
PJU5NA80800V N-Channel MOSFETPan Jit International
Pan Jit International

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