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MS18N50 PDF даташит

Спецификация MS18N50 изготовлена ​​​​«Bruckewell» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв MS18N50
Описание N-Channel MOSFET
Производители Bruckewell
логотип Bruckewell логотип 

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MS18N50 Даташит, Описание, Даташиты
MS18N50
500V N-channel MOSFET
Description
The MS18N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
Originative New Design
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
100% EAS Test
Extended Safe Operating Area
RoHS compliant package
Application
High current, High speed switching
PFC (Power Factor Correction)
SMPS (Switched Mode Power Supplies)
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
500 V
±30 V
18 A
10.8 A
IDM Drain Current -Pulsed
72 A
EAS Single Pulsed Avalanche Energy
990 mJ
EAR Repetitive Avalanche Energy
23.5 mJ
dV/dt
Peak Diode Recovery dV/dt
4.5 V/ns
TJ, Tstg
Operating Junction and Storage Temperature
-55~+150
°C
Power Dissipation (TC=25°C)
PD
Power Dissipation (TC=100°C)
238 W
1.8 W
• Drain current limited by maximum junction temperature
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014









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MS18N50 Даташит, Описание, Даташиты
MS18N50
500V N-channel MOSFET
Thermal Characteristics
Symbol
Parameter
Rthjc
Thermal Resistance resistance
RθJA
Thermal Resistance resistance
Static Characteristics
Symbol
Test Conditions
VGS VDS = VGS, ID = 250μA
BVDSS
BVDSS /TJ
VGS = 0 V , ID = 250μA
ID = 250μA, Referenced to 25°C
IDSS
IGSSF
VDS = 500 V , VGS = 0 V
VDS = 400 V , VGS = 0 V , TC = 125°C
VGS =-30 V, VDS = 0 V
IGSSR
VGS = -30 V, VDS = 0 V
*RDS(ON)
VGS = 10 V , ID = 9 A
Dynamic Characteristics
Symbol
Test Conditions
CISS
COSS
VDS = 25 V, VGS = 0 V , f=1.0MHz
CRSS
td(on)
tr
td(off)
tf
VDD = 250 V, ID = 18 A , RG = 25 Ω
Qg
Qgs VDD = 400 V, ID =18 A , VGS =10 V
Qgd
Source-Drain Diode Characteristics
Symbol
Test Conditions
IS
ISM
VSD IS = 18 A , VGS = 0 V
trr IF = 18 A , VGS = 0 V
Qrr diF/dt=100A/us
Publication Order Number: [MS18N50]
Value
0.53
62.5
Units
°C/W
Min Typ. Max. Units
3.0 5.0 V
500 --
-- V
-- 0.6 -- V/°C
-- -- 1 uA
10
-- -- 100 nA
-100
nA
-- 0.25 0.32 Ω
Min Typ. Max. Units
-- 2500 -- pF
-- 400 -- pF
-- 40 -- pF
-- 70 -- ns
-- 190 -- ns
-- 100 -- ns
-- 100 -- ns
-- 48.5 -- nC
-- 14 -- nC
-- 22 -- nC
Min Typ. Max. Units
-- -- 18
A
-- -- 72
-- -- 1.5 V
-- 550 -- ns
-- 5.5 -- uC
© Bruckewell Technology Corporation Rev. A -2014









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MS18N50 Даташит, Описание, Даташиты
MS18N50
500V N-channel MOSFET
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L= 5.5mH,IAS= 18.0A,VDD=50V,RG=25Ω,Starting TJ=25°˚C
3. ISD ≤ 16.0 A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014










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Номер в каталогеОписаниеПроизводители
MS18N50N-Channel MOSFETBruckewell
Bruckewell

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