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MS15N60 PDF даташит

Спецификация MS15N60 изготовлена ​​​​«Bruckewell» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв MS15N60
Описание N-Channel MOSFET
Производители Bruckewell
логотип Bruckewell логотип 

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MS15N60 Даташит, Описание, Даташиты
MS15N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS15N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Application
Adapter
Switching Mode Power Supply
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
ID
IDM
IAR
EAS
EAR
dV/dt
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current -Pulsed
Avalanche Current
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dV/dt
TJ Storage Temperature
• Drain current limited by maximum junction temperature
Value
600
±30
15
9.5
60
15
245
24
9.8
150
Unit
V
V
A
A
A
A
mJ
mJ
V/ns
°C
Publication Order Number: [MS15N60]
© Bruckewell Technology Corporation Rev. A -2014









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MS15N60 Даташит, Описание, Даташиты
MS15N60
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Power Dissipation (TC=25°C)
PD
Derate above 25C
TSTG
TL
Operating Junction and Storage Temperature
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Note:
1. Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=15A, VDD=50V, L=0.5mH, RG=25Ω, starting TJ=+25°C.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Value
245
2
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance , Junction-to-Case
RθJA Thermal Resistance , Junction-to-Ambient
Typ. Max.
-- 0.51
-- 62.5
Unit
W
W/°C
°C
°C
Units
°C/W
Static Characteristics
Symbol
Parameter
VGS(th)
Gate Threshold Voltage
BVDSS
Drain-Source Breakdown Voltage
BVDSS /TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
*RDS(ON)
Gate-Body Leakage Current,
Forward
Static Drain-Source
On-Resistance
Test Conditions
VDS = VGS, ID=250μA
VGS = 0 V , ID=250μA
ID = 250μA, Referenced to
25°C
VDS = 600 V , VGS = 0 V
VDS = 480 V , TC = 125°C
VGS = ±30
VGS = 10 V , ID = 7.5 A
Min Typ. Max. Units
2.0 -- 4.0 V
600 -- -- V
-- 0.7 -- V/°C
-- -- 1 uA
10
-- -- ±100 nA
-- 0.45 0.52 Ω
Dynamic Characteristics
Symbol Parameter
td(on)
Turn-On Time
tr Turn-On Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Publication Order Number: [MS15N60]
Test Conditions
VDD = 250 V, ID = 15 A,
VGS = 10 V , RG = 9.1 Ω
Min
--
--
--
--
Typ.
50
78
120
66
Max.
101
162
261
128
Units
ns
ns
ns
ns
© Bruckewell Technology Corporation Rev. A -2014









No Preview Available !

MS15N60 Даташит, Описание, Даташиты
MS15N60
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol Parameter
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
VDD = 250 V,ID = 15 A,
VGS = 10 V
Min
--
--
--
--
--
--
Typ.
2270
300
23
36
9
16
Max.
3000
405
37
60
--
--
Units
pF
pF
pF
nC
nC
nC
Source-Drain Diode
Symbol Parameter
IS
ISM
VSD
trr
Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Test Conditions
VD = VG = 0,
VS = 1.3 V
IS = 15 A , VGS = 0 V
IF = 15 A , VGS = 0 V
diF/dt=100A/us
Min Typ. Max. Units
-- -- 14
A
-- -- 60
-- -- 1.4 V
-- 600 -- ns
-- 7.2 -- uC
Publication Order Number: [MS15N60]
© Bruckewell Technology Corporation Rev. A -2014










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Номер в каталогеОписаниеПроизводители
MS15N60N-Channel MOSFETBruckewell
Bruckewell

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