MS15N50 PDF даташит
Спецификация MS15N50 изготовлена «Bruckewell» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | MS15N50 |
Описание | N-Channel MOSFET |
Производители | Bruckewell |
логотип |
4 Pages
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MS15N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS15N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Power Factor Correction
• Flat Panel Power
• Full and Half Bridge Power Supplies
• Two-Transistor Forward Power Supplies
Graphic symbol
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
500 V
±30 V
15 A
9A
IDM Drain Current -Pulsed
60 A
IAR Avalanche Current
15 A
EAS Single Pulsed Avalanche Energy
750 mJ
EAR Repetitive Avalanche Energy
25 mJ
dV/dt
Peak Diode Recovery dV/dt
4.5 V/ns
TJ Storage Temperature
• Drain current limited by maximum junction temperature
Publication Order Number: [MS15N50]
150 °C
© Bruckewell Technology Corporation Rev. A -2014
No Preview Available ! |
MS15N50
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Power Dissipation (TC=25°C)
PD
Derate above 25C
TSTG
Operating Junction and Storage Temperature
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
Note:
1. TJ=+25 to +150.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD=15A, dI/dt<100A/␣s, VDD<BVDSS, TJ=+150.
4. IAS=15A, VDD=50V, L=6mH, RG=25", starting TJ=+25.
Value
250
2
-55 to +150
300
Unit
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance , Junction-to-Case
RθJA Thermal Resistance , Junction-to-Ambient
Typ.
Max.
Units
-- 0.5
°C/W
-- 62.5
Static Characteristics
Symbol
Parameter
VGS(th)
Gate Threshold Voltage
BVDSS
Drain-Source Breakdown Voltage
△BVDSS /△TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
*RDS(ON)
Gate-Body Leakage Current,
Forward
Static Drain-Source
On-Resistance
Test Conditions
VDS = VGS, ID = 250μA
VGS = 0 V , ID = 250μA
ID = 250μA, Referenced to
25°C
VDS = 500 V , VGS = 0 V
VDS = 400 V , TC = 125°C
VDS = ±30
VGS = 10 V , ID = 7.5 A
Min Typ. Max. Units
2.0 -- 4.0 V
500 -- -- V
-- 0.5 -- V/°C
-- -- 1 uA
25
-- -- ±100 nA
-- 0.38 0.42 Ω
Dynamic Characteristics
Symbol Parameter
td(on)
Turn-On Time
tr Turn-On Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Test Conditions
VDD = 250 V, ID = 15 A,
VGS = 10 V , RG = 10 Ω
Min
--
--
--
--
Typ.
40
140
100
85
Max.
--
--
--
--
Units
ns
ns
ns
ns
Publication Order Number: [MS15N50]
© Bruckewell Technology Corporation Rev. A -2014
No Preview Available ! |
MS15N50
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol Parameter
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 25 V, VGS = 0 V,
f=1.0MHz
VDD = 250 V,ID = 15 A,
VGS = 10 V
Min
--
--
--
--
--
--
Typ.
3090
250
120
45
11
2
Max.
--
--
--
--
--
--
Units
pF
pF
pF
nC
nC
nC
Source-Drain Diode
Symbol Parameter
IS
ISM
VSD
trr
Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Test Conditions
VD = VG = 0,
VS = 1.3V
IS = 15 A , VGS = 0 V
IF = 15 A , VGS = 0 V
diF/dt=100A/μs
Min Typ. Max. Units
-- -- 15
A
-- -- 60
-- -- 1.5 V
-- 420 -- ns
-- 5 -- μC
Publication Order Number: [MS15N50]
© Bruckewell Technology Corporation Rev. A -2014
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Номер в каталоге | Описание | Производители |
MS15N50 | N-Channel MOSFET | Bruckewell |
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