DataSheet26.com

MS15N50 PDF даташит

Спецификация MS15N50 изготовлена ​​​​«Bruckewell» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв MS15N50
Описание N-Channel MOSFET
Производители Bruckewell
логотип Bruckewell логотип 

4 Pages
scroll

No Preview Available !

MS15N50 Даташит, Описание, Даташиты
MS15N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS15N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Application
Power Factor Correction
Flat Panel Power
Full and Half Bridge Power Supplies
Two-Transistor Forward Power Supplies
Graphic symbol
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
500 V
±30 V
15 A
9A
IDM Drain Current -Pulsed
60 A
IAR Avalanche Current
15 A
EAS Single Pulsed Avalanche Energy
750 mJ
EAR Repetitive Avalanche Energy
25 mJ
dV/dt
Peak Diode Recovery dV/dt
4.5 V/ns
TJ Storage Temperature
• Drain current limited by maximum junction temperature
Publication Order Number: [MS15N50]
150 °C
© Bruckewell Technology Corporation Rev. A -2014









No Preview Available !

MS15N50 Даташит, Описание, Даташиты
MS15N50
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Power Dissipation (TC=25°C)
PD
Derate above 25C
TSTG
Operating Junction and Storage Temperature
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
Note:
1. TJ=+25 to +150.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD=15A, dI/dt<100A/s, VDD<BVDSS, TJ=+150.
4. IAS=15A, VDD=50V, L=6mH, RG=25", starting TJ=+25.
Value
250
2
-55 to +150
300
Unit
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance , Junction-to-Case
RθJA Thermal Resistance , Junction-to-Ambient
Typ.
Max.
Units
-- 0.5
°C/W
-- 62.5
Static Characteristics
Symbol
Parameter
VGS(th)
Gate Threshold Voltage
BVDSS
Drain-Source Breakdown Voltage
BVDSS /TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
*RDS(ON)
Gate-Body Leakage Current,
Forward
Static Drain-Source
On-Resistance
Test Conditions
VDS = VGS, ID = 250μA
VGS = 0 V , ID = 250μA
ID = 250μA, Referenced to
25°C
VDS = 500 V , VGS = 0 V
VDS = 400 V , TC = 125°C
VDS = ±30
VGS = 10 V , ID = 7.5 A
Min Typ. Max. Units
2.0 -- 4.0 V
500 -- -- V
-- 0.5 -- V/°C
-- -- 1 uA
25
-- -- ±100 nA
-- 0.38 0.42 Ω
Dynamic Characteristics
Symbol Parameter
td(on)
Turn-On Time
tr Turn-On Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Test Conditions
VDD = 250 V, ID = 15 A,
VGS = 10 V , RG = 10 Ω
Min
--
--
--
--
Typ.
40
140
100
85
Max.
--
--
--
--
Units
ns
ns
ns
ns
Publication Order Number: [MS15N50]
© Bruckewell Technology Corporation Rev. A -2014









No Preview Available !

MS15N50 Даташит, Описание, Даташиты
MS15N50
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol Parameter
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 25 V, VGS = 0 V,
f=1.0MHz
VDD = 250 V,ID = 15 A,
VGS = 10 V
Min
--
--
--
--
--
--
Typ.
3090
250
120
45
11
2
Max.
--
--
--
--
--
--
Units
pF
pF
pF
nC
nC
nC
Source-Drain Diode
Symbol Parameter
IS
ISM
VSD
trr
Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Test Conditions
VD = VG = 0,
VS = 1.3V
IS = 15 A , VGS = 0 V
IF = 15 A , VGS = 0 V
diF/dt=100A/μs
Min Typ. Max. Units
-- -- 15
A
-- -- 60
-- -- 1.5 V
-- 420 -- ns
-- 5 -- μC
Publication Order Number: [MS15N50]
© Bruckewell Technology Corporation Rev. A -2014










Скачать PDF:

[ MS15N50.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
MS15N50N-Channel MOSFETBruckewell
Bruckewell

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск