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MS13P21 PDF даташит

Спецификация MS13P21 изготовлена ​​​​«Bruckewell» и имеет функцию, называемую «P-Channel MOSFET».

Детали детали

Номер произв MS13P21
Описание P-Channel MOSFET
Производители Bruckewell
логотип Bruckewell логотип 

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MS13P21 Даташит, Описание, Даташиты
MS13P21
P-Channel 20-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low rDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Features
Low rDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe SC70-3
saves board space
Fast switching speed
High performance trench technology
RoHS compliant package
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MS13P21]
© Bruckewell Technology Corporation Rev. A -2014









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MS13P21 Даташит, Описание, Даташиты
MS13P21
P-Channel 20-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Currenta (TA=25°C)
Continuous Drain Currenta (TA =70°C)
IDM Pulsed Drain Currentb
IS Continuous Source Current (Diode Conduction)a
Power Dissipationa (TA =25°C)
PD Power Dissipationa (TA =70°C)
TJ/TSTG
Operating Junction and Storage Temperature
Value
-20
±8
-1.7
-1.4
-2.5
±0.28
0.34
0.22
-55 to +150
Unit
V
V
A
A
A
A
W
W
°C
THERMAL RESISTANCE RATINGS
Symbol
Parameter
RTHJA
Maximum Junction-to-Ambient C/Wa (t <= 5 sec)
Maximum Junction-to-Ambient C/Wa (Steady-State)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Maximum
375
430
Units
°C/W
Static
Symbol
VGS
Parameter
Gate Threshold Voltage
Test Conditions
VDS = VGS, ID =-250μA
Min Typ. Max. Units
-0.4 V
IGSS Gate-Body Leakage
VDS = 0 V , VGS = ±8 V
±100 nA
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain CurrentA
VDS = -16 V , VGS = 0 V
VDS = -16 V , VGS = 0 V , TJ= 55°C
VDS = -5 V, VGs = -4.5 V
-5
-1 uA
-10
A
IDS(on)
gfs
Drain-Source On-ResistanceA
Forward TranconductanceA
VGS = -4.5 V, ID = -1.7 A
VGS = -2.5 V, ID = -1.5 A
VDS = -5V, ID = -1.25 A
79 mΩ
110
9S
VSD Diode Forward Voltage
IS = -0.46 V, VGS = 0 V
-0.65
V
Dynamicb
Symbol Parameter
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Test Conditions
VDD = -10 V , IL = -1 A,
VGEN = -4.5 V , RG = 6 Ω
Min Typ. Max. Units
-- 10 -- ns
-- 9 -- ns
-- 27 -- ns
-- 11 -- ns
Publication Order Number: [MS13P21]
© Bruckewell Technology Corporation Rev. A -2014









No Preview Available !

MS13P21 Даташит, Описание, Даташиты
MS13P21
P-Channel 20-V (D-S) MOSFET
Dynamicb
Symbol Parameter
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS= -10 V , ID = -1.7 A,
VGS= -4.5 V
Min Typ. Max. Units
-- 7.2 -- nC
-- 1.7 -- nC
-- 1.5 -- nC
Publication Order Number: [MS13P21]
© Bruckewell Technology Corporation Rev. A -2014










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Номер в каталогеОписаниеПроизводители
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