DataSheet26.com

MS10N80 PDF даташит

Спецификация MS10N80 изготовлена ​​​​«Bruckewell» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв MS10N80
Описание N-Channel MOSFET
Производители Bruckewell
логотип Bruckewell логотип 

6 Pages
scroll

No Preview Available !

MS10N80 Даташит, Описание, Даташиты
MS10N80
800V N-Channel MOSFET
Description
The MS10N80 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
Originative New Design
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 46nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.10 Ω (Typ.) @VGS=10V
100% Avalanche Tested
RoHS compliant package
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
ID
IDM
EAS
EAR
IAR
dv/dt
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C) 44 W
PD
Derating Factor above 25 °C
Value
800
±30
10
6.5
40
960
24
9.2
4.0
60
0.48
Unit
V
V
A
A
A
mJ
mJ
A
V/ns
W
W/°C
Publication Order Number: [MS10N80]
© Bruckewell Technology Corporation Rev. A -2014









No Preview Available !

MS10N80 Даташит, Описание, Даташиты
MS10N80
800V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
TJ,TSTG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
Drain current limited by maximum junction temperature
Value
-55 to +150
300
Unit
°C
°C
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient
Min.
--
--
Typ.
--
--
Max.
1.43
62.5
Units
°C/W
On Characteristics
Symbol Parameter
VGS Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions
VDS = VGS,ID = 250μA
VGS = 10 V,ID = 5.0 A
Min Typ. Max. Units
3.0 -- 5.0 V
-- 1.7 2.1 Ω
Off Characteristics
Symbol Parameter
BVDSS
BVDSS
/TJ
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
IDSS Current
IGSSF
Gate-Body Leakage
Current, Forward
IGSSR
Gate-Body Leakage
Current, Reverse
Test Conditions
VGS = 0 V , ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = 800 V , VGS = 0 V
VDS = 640 V , TC = 125°C
VGS = 30 V , VDS = 0 V
VGS = -30 V , VDS = 0 V
Min
800
--
--
--
--
Typ.
--
1.0
--
--
--
Max.
--
Units
V
-- V/°C
10 μA
100
100 nA
-100
nA
Dynamic Characteristics
Symbol Parameter
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
Min Typ. Max. Units
-- 2200 -- pF
VDS = 25 V, VGS = 0 V,
--
190
-- pF
f=1.0MHz
-- 20 -- pF
Dynamic Characteristics
Symbol Parameter
td(on)
Turn-On Time
tr Turn-On Time
td(off) Turn-Off Delay Time
Publication Order Number: [MS10N80]
Test Conditions
Min Typ. Max. Units
-- 60 -- ns
VDS = 400 V, ID = 7 A,
--
150
-- ns
RG = 25 Ω
-- 110 -- ns
© Bruckewell Technology Corporation Rev. A -2014









No Preview Available !

MS10N80 Даташит, Описание, Даташиты
MS10N80
800V N-Channel MOSFET
tf Turn-Off Fall Time
Dynamic Characteristics
Symbol Parameter
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 640 V,ID = 10 A,
VGS = 10 V
--
Min
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
Symbol Parameter
Test Conditions
IS Continuous Source-Drain Diode Forward Current
ISM ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7 A , VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 7 A , VGS = 0 V
diF/dt=100A/μs
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=18mH, IAS=10A, VDD=5V, RG=25Ω, Starting TJ=25
3. ISD7A, di/dt200A/μs,VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse Width 300μs, Duty Cycle2%
5. Essentially Independent of Operating Temperature
Min
--
--
--
--
--
90
Typ.
46
15
20
-- ns
Max.
--
--
--
Units
nC
nC
nC
Typ.
--
--
--
730
12
Max.
10
40
1.4
--
--
Units
A
V
ns
μC
Publication Order Number: [MS10N80]
© Bruckewell Technology Corporation Rev. A -2014










Скачать PDF:

[ MS10N80.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
MS10N80N-Channel MOSFETBruckewell
Bruckewell

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск