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MMBTA13 PDF даташит

Спецификация MMBTA13 изготовлена ​​​​«SeCoS» и имеет функцию, называемую «Darlington Amplifier Transistor NPN Silicon».

Детали детали

Номер произв MMBTA13
Описание Darlington Amplifier Transistor NPN Silicon
Производители SeCoS
логотип SeCoS логотип 

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MMBTA13 Даташит, Описание, Даташиты
Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
3
1
2
COLLECTOR 3
BASE 1
EMITTER 2
A
L
3
BS
12
VG
FEATURES
C
Power dissipation
D
PCM : 0.3W Tamb=25
Collector current
ICM : 0.3A
Collector-base voltage
V(BR)CBO : 30V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
J L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= 100μAIE=0
30
Collector-emitter breakdown voltage
V(BR)CEO Ic= 100uAIB=0
30
Collector-emitter breakdown voltage
V(BR)EBO IE= 100μAIc=0
10
MAX
Collector cut-off current
ICBO
VCB=30 V , IE=0
0.1
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE(1) *
hFE(2) *
VCE (sat) *
VEB= 10V , IC=0
VCE=5V, IC= 10mA
VCE=5V, IC= 100mA
IC=100 mA, IB=0.1mA
MMBTA13
MMBTA14
MMBTA13
MMBTA14
5000
10000
10000
20000
0.1
1.5
Base-emitter voltage
VBE *
VCE=5V,IC= 100mA
2.0
Transition frequency
fT
VCE=5V, IC= 10mA
f=100MHz
125
UNIT
V
V
V
μA
μA
V
V
MHz
* Pulse Test : pulse width≤300μs,duty cycle≤2%。
Marking : MMBTA13:K2DMMBTA14K3D
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3









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MMBTA13 Даташит, Описание, Даташиты
Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
500
200
100
50
20
10
5.0
10 20
BANDWIDTH = 1.0 Hz
RS 0
10 µA
2.0
1.0
0.7
0.5
0.3
0.2
100 µA
IC = 1.0 mA
0.1
0.07
0.05
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk
f, FREQUENCY (Hz)
50Ăk 100Ăk
0.03
0.02
10
20
Figure 1. Noise Voltage
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 µA
10 µA
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
f, FREQUENCY (Hz)
Figure 2. Noise Current
200
100 BANDWIDTH = 10 Hz TO 15.7 kHz
70 IC = 10 µA
50
30 100 µA
20
1.0 mA
14
12
10
8.0
6.0
4.0 IC = 1.0 mA
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 µA
100 µA
10
1.0 2.0
5.0 10 20 50 100 200
RS, SOURCE RESISTANCE (k)
500 1000
Figure 3. Total Wideband Noise Voltage
0
1.0 2.0
5.0 10 20 50 100 200
RS, SOURCE RESISTANCE (k)
500 1000
Figure 4. Wideband Noise Figure
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
0.5
SINGLE PULSE
SINGLE PULSE
ZθJC(t) = r(t) RθJCąTJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) RθJAąTJ(pk) - TA = P(pk) ZθJA(t)
1.0 2.0
5.0 10
20 50
t, TIME (ms)
100 200
Figure 5. Thermal Response
500 1.0Ăk 2.0Ăk
5.0Ăk 10Ăk
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 2 of 3









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MMBTA13 Даташит, Описание, Даташиты
Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
20 4.0
VCE = 5.0 V
10
TJ = 25°C
f = 100 MHz
2.0 TJ = 25°C
7.0 Cibo 1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0
0.04
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
0.2
0.5
1.0 2.0 0.5 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
500
200Ăk
100Ăk
70Ăk
50Ăk
TJ = 125°C
25°C
30Ăk
20Ăk
10Ăk
7.0Ăk
5.0Ăk
-ā55°C
3.0Ăk
VCE = 5.0 V
2.0Ăk
5.0 7.0 10
20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
500
3.0
2.5
IC = 10 mA 50 mA
2.0
250 mA 500 mA
TJ = 25°C
1.5
1.0
0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (µA)
Figure 9. Collector Saturation Region
1.6
TJ = 25°C
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
VCE(sat) @ IC/IB = 1000
-ā1.0 *APPLIES FOR IC/IB hFE/3.0
-ā2.0 *RqVC FOR VCE(sat)
-ā3.0
-ā4.0
qVB FOR VBE
-ā5.0
25°C TO 125°C
-ā55°C TO 25°C
25°C TO 125°C
-ā55°C TO 25°C
0.6
5.0 7.0
10 20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
-ā6.0
500 5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 3 of 3










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