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PDF NCE3060G Data sheet ( Hoja de datos )

Número de pieza NCE3060G
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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http://www.ncepower.com
Pb Free Product
NCE3060G
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3060G uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =60A
RDS(ON) <4.0 m@ VGS=10V
RDS(ON) <5.5 m@ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Schematic diagram
DFN5X6-8L top view
Package Marking and Ordering Information
Device Marking
NCE3060G
Device
NCE3060G
Device Package
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
ID (100)
IDM
PD
TJ,TSTG
Limit
30
±20
60
47
200
60
0.5
-55 To 150
Unit
V
V
A
A
A
W
W/
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.0 /W
Wuxi NCE Power r Co., Ltd
Page 1
v1.0

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NCE3060G pdf
http://www.ncepower.com
Pb Free Product
NCE3060G
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature ()
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature ()
Figure 10 Current- Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power r Co., Ltd
Page 5
v1.0

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