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MUR860 PDF даташит

Спецификация MUR860 изготовлена ​​​​«SIRECT» и имеет функцию, называемую «Ultra Fast Recovery Diodes».

Детали детали

Номер произв MUR860
Описание Ultra Fast Recovery Diodes
Производители SIRECT
логотип SIRECT логотип 

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MUR860 Даташит, Описание, Даташиты
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
C(TAB)
A
A
C
C
A=Anode, C=Cathode, TAB=Cathode
MUR820
MUR860
MUR8100
VRSM
V
200
600
1000
VRRM
V
200
600
1000
Dimensions TO-220AC
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Symbol
Test Conditions
IFRMS
IFAVM
IFRM
IFSM
I2t
TVJ=TVJM
TC=115oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45oC
TVJ=150oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ=45oC
TVJ=150oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md Mounting torque
Weight
Maximum Ratings
16
8
130
100
110
85
95
50
50
36
37
-40...+150
150
-40...+150
50
0.4...0.6
2
Unit
A
A
A2s
oC
W
Nm
g









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MUR860 Даташит, Описание, Даташиты
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
RthCK
RthJA
trr
IRM
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
IF=8A; TVJ=150oC
TVJ=25oC
For power-loss calculations only
TVJ=TVJM
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
VR=350V; IF=8A; -diF/dt=64A/us; L<_0.05uH; TVJ=100oC
Characteristic Values
typ. max.
20
10
1.5
1.3
1.5
0.98
28.7
2.5
0.5
60
35 50
2.5 2.8
Unit
uA
uA
mA
V
V
m
K/W
ns
A
FEATURES
* International standard package
JEDEC TO-220AC
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling









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MUR860 Даташит, Описание, Даташиты
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -di /dt.
F
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus di /dt.
F
Fig. 7 Transient thermal impedance junction to case.










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