STS20N3LLH6 PDF даташит
Спецификация STS20N3LLH6 изготовлена «STMicroelectronics» и имеет функцию, называемую «N-channel MOSFET». |
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Детали детали
Номер произв | STS20N3LLH6 |
Описание | N-channel MOSFET |
Производители | STMicroelectronics |
логотип |
13 Pages
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STS20N3LLH6
N-channel 30 V, 0.004 Ω, 20 A, SO-8
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID
STS20N3LLH6
30 V 0.0047 Ω 20 A
t(s)■ RDS(on) * Qg industry benchmark
uc■ Extremely low on-resistance RDS(on)
d■ High avalanche ruggedness
ro■ Low gate drive power losses
P■ Very low switching gate charge
leteApplication
so■ Switching applications
- ObDescription
t(s)This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
ucwith a new gate structure.The resulting Power
dMOSFET exhibits the lowest RDS(on) in all
Obsolete Propackages.
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS20N3LLH6
Marking
20G3L
Package
SO-8
Packaging
Tape and reel
March 2010
Doc ID 15528 Rev 2
1/13
www.st.com
13
No Preview Available ! |
Contents
Contents
STS20N3LLH6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Obsolete Product(s) - Obsolete Product(s)5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 15528 Rev 2
No Preview Available ! |
STS20N3LLH6
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
VGS(1)
Drain-source voltage (VGS = 0)
Gate-source voltage
30 V
± 20 V
ID Drain current (continuous) at TC = 25 °C
20 A
ID Drain current (continuous) at TC=100 °C
12.5 A
IDM(2) Drain current (pulsed)
t(s)PTOT Total dissipation at TC = 25 °C
cTJ Operating junction temperature
uTstg Storage temperature
rod1. Continuous mode
P2. Pulse width limited by safe operating area
oleteTable 3. Thermal resistance
sSymbol
Parameter
ObRthj-amb (1) Thermal resistance junction-ambient
Obsolete Product(s) -1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
80
2.7
-55 to 150
A
W
°C
Value
47
Unit
°C/W
Doc ID 15528 Rev 2
3/13
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STS20N3LLH6 | N-channel MOSFET | STMicroelectronics |
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