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RJK0406JPE PDF даташит

Спецификация RJK0406JPE изготовлена ​​​​«Renesas» и имеет функцию, называемую «Silicon N-Channel MOS FET».

Детали детали

Номер произв RJK0406JPE
Описание Silicon N-Channel MOS FET
Производители Renesas
логотип Renesas логотип 

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RJK0406JPE Даташит, Описание, Даташиты
RJK0406JPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 1.65 mtyp.
High current devices : ID = 160 A
Low input capacitance : Ciss = 6300 pF typ
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tch = 25C, Rg 50
3. Tc = 25C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
I Note3
D
ID (pulse) Note1
I Note3
DR
IDR (pulse) Note1
I Note2
AP
E Note2
AR
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance ch-c: 0.781C/W
Preliminary Datasheet
R07DS0335EJ0200
Rev.2.00
Dec 19, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
40
+20 / –5
160
640
160
640
70
653
192
175
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C
C
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
Page 1 of 6









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RJK0406JPE Даташит, Описание, Даташиты
RJK0406JPE
Electrical Characteristics
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note: 5. Pulse test
Preliminary
Symbol
IGSS
IDSS
VGS(off)
RDS(on)
Min
2.0
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Typ
1.65
6300
2200
1900
155
20
70
40
80
110
75
0.94
60
Max
10
1
3.5
2.0
1.22
Unit
A
A
V
m
(Ta = 25C)
Test Conditions
VGS = +20/–5 V, VDS = 0
VDS = 40 V, VGS = 0
ID = 1 mA , VDS = 10 V
ID = 80 A, VGS= 10 V Note5
pF VDS = 10 V,
pF VGS = 0
pF f = 1 MHz
nC VDD = 25 V,
nC VGS = 10 V,
nC ID = 80 A
ns ID= 80 A,
ns RL = 0.375,
ns VGS = 10 V,
ns RG = 4.7
V IF = 160 A, VGS = 0 Note5
ns IF = 80 A, VGS = 0,
diF/dt = 100 A/s
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
Page 2 of 6









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RJK0406JPE Даташит, Описание, Даташиты
RJK0406JPE
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
200
10 V
8V
160
5V
120
VGS = 4.4 V
80
40
Tc = 25°C
Pulse Test
0 5 10
Drain to Source Voltage VDS (V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
10
ID = 80 A
Pulse Test
8
6
Tc = 175°C
4 25°C
2
0 40°C
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Preliminary
Maximum Safe Operation Area
1000
100
10 Operation
in this area
is limited RDS(on)
1
DC Operation
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 1
10 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
1000
VDS = 10 V
100 Pulse Test
10 Tc = 175°C
1
25°C
0.1
0.01
40°C
0.001
012 345
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
10
Tc = 25°C
Pulse Test
VGS = 8 V
10 V
1
0.1
1
10 100
Drain Current ID (A)
1000
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
Page 3 of 6










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