DataSheet26.com

RJK0323JPD PDF даташит

Спецификация RJK0323JPD изготовлена ​​​​«Renesas» и имеет функцию, называемую «Silicon N-Channel MOS FET».

Детали детали

Номер произв RJK0323JPD
Описание Silicon N-Channel MOS FET
Производители Renesas
логотип Renesas логотип 

7 Pages
scroll

No Preview Available !

RJK0323JPD Даташит, Описание, Даташиты
RJK0323JPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 7.0 mΩ typ.
Low drive current
Capable of 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
4
123
1G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Tch = 25°C, Rg 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
I Note2
AP
E Note2
AR
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance θch-c: 3.125°C/W
Preliminary Datasheet
R07DS0334EJ0100
Rev.1.00
Apr 18, 2011
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Value
30
±20
30
120
30
30
90
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
Page 1 of 6









No Preview Available !

RJK0323JPD Даташит, Описание, Даташиты
RJK0323JPD
Electrical Characteristics
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note: 4. Pulse test
Preliminary
Symbol
IGSS
IDSS
VGS(off)
RDS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
1.0
Typ
7
9
2600
470
200
40
6
5
25
300
85
7
0.9
30
Max
±10
10
2.5
9
13
Unit
μA
μA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS= 10 V Note4
ID = 15 A, VGS= 4.5 V Note4
VDS = 10 V, VGS = 0
f = 1 MHz
VDD = 10 V, VGS = 10 V,
ID = 30 A
VGS = 10 V, ID= 15 A,
VDD = 10 V, RL = 2.0 Ω
RG = 4.7 Ω
IF = 30 A, VGS = 0
IF = 30 A, VGS = 0,
diF/dt = 100 A/μs
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
Page 2 of 6









No Preview Available !

RJK0323JPD Даташит, Описание, Даташиты
RJK0323JPD
Main Characteristics
Power vs. Temperature Derating
50
40
30
20
10
0 50 100 150
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
5V
40
3.1 V
30
20 VGS = 2.9 V
10
Tc = 25°C
Pulse Test
0 5 10
Drain to Source Voltage VDS (V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
25
ID = 15 A
Pulse Test
20
15 Tc = 150°C
10 25°C
5
40°C
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Preliminary
Maximum Safe Operation Area
1000
100 10 μs
100 μs
10
Operation
1 in this area
is limited RDS(on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 1
DC Operation
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
10
Tc = 150°C
1
0.1 25°C
40°C
0.01
0.001
0123 4
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Tc = 25°C
Pulse Test
10 VGS = 4.5 V
10 V
1
1 10 100 1000
Drain Current ID (A)
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
Page 3 of 6










Скачать PDF:

[ RJK0323JPD.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
RJK0323JPDSilicon N-Channel MOS FETRenesas
Renesas

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск