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CR12LM-12B PDF даташит

Спецификация CR12LM-12B изготовлена ​​​​«Renesas» и имеет функцию, называемую «Thyristor».

Детали детали

Номер произв CR12LM-12B
Описание Thyristor
Производители Renesas
логотип Renesas логотип 

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CR12LM-12B Даташит, Описание, Даташиты
CR12LM-12B
Thyristor
Medium Power Use
Preliminary Datasheet
R07DS0213EJ0100
Rev.1.00
Dec 03, 2010
Features
IT (AV) : 12 A
VDRM : 600 V
IGT : 30 mA
Viso : 1800 V
The product guaranteed maximum junction
temperature of 150°C
Insulated Type
Planar Passivation Type
UL Recognized: Yellow Card No. E223904
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
1
23
2
3
1
1. Cathode
2. Anode
3. Gate
Applications
Switching mode power supply, motor control, heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
R07DS0213EJ0100 Rev.1.00
Dec 03, 2010
Page 1 of 6









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CR12LM-12B Даташит, Описание, Даташиты
CR12LM-12B
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
Ratings
18.8
12
360
544
5
0.5
6
10
2
– 40 to +150
– 40 to +150
1.5
1800
Preliminary
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 81°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Symbol
IRRM
IDRM
VTM
Min.
Typ.
Max.
2.0/5.0
2.0/5.0
1.6
Unit
mA
mA
V
Gate trigger voltage
Gate non-trigger voltage
VGT
VGD 0.2/0.1
1.5 V
—V
Gate trigger current
IGT — — 30 mA
Holding current
IH — 15 — mA
Thermal resistance
Rth (j-c)
— 3.2 °C/W
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions
Tj = 125°C/150°C, VRRM applied
Tj = 125°C/150°C, VDRM applied
Tc = 25°C, ITM = 40 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 125°C/150°C,
VD = 1/2 VDRM
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
Junction to caseNote1
R07DS0213EJ0100 Rev.1.00
Dec 03, 2010
Page 2 of 6









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CR12LM-12B Даташит, Описание, Даташиты
CR12LM-12B
Performance Curves
Maximum On-State Characteristics
103
Tc = 2C
102
101
100
0.8 1.2 1.6 2.0 2.4 2.8 3.2
On-State Voltage (V)
Gate Characteristics
102
VFGM = 6 V
101
PGM = 5 W
VGT = 1.5 V
PG(AV) =
0.5 W
100
IGT = 30 mA
IFGM
=2A
101
102
101
VGD = 0.1 V
102
103
Gate Current (mA)
104
Gate Trigger Voltage vs.
Junction Temperature
103
Typical Example
102
101
100
–40
0
40 80 120 160
Junction Temperature (°C)
R07DS0213EJ0100 Rev.1.00
Dec 03, 2010
Preliminary
Rated Surge On-State Current
400
320
240
160
80
0
100 101 102
Conduction Time (Cycles at 60 Hz)
Gate Trigger Current vs.
Junction Temperature
103
Typical Example
102
101
100
40 0 40 80 120 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
101
100
10-1
10-3
10-2
10-1
100
Time (s)
101
Page 3 of 6










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