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PDF RTBN14BAP1 Data sheet ( Hoja de datos )
| Número de pieza | RTBN14BAP1 | |
| Descripción | Transistor | |
| Fabricantes | Isahaya Electronics Corporation | |
| Logotipo |  |
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PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
RTBN14BAP1 is a one chip transistor
with built-in bias transistor.
FEATURE
・Built-in bias resistor （R2=10kΩ）
・High collector current （IC=1A）
・Small package for easy mounting.
APPLICATION
Switching.
EQUAIVALENT CIRCUIT
C
B
R1
R2
E
〈SMALL-SIGNAL TRANSISTOR〉
RTBN14BAP1
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
UNIT：mm
4.6 MAX
1.6
1.5
E CB
0.53
MAX
1.5
3.0
0.48 MAX
0.4
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E：EMＥI:TエTEミRッタ
C：CＣＢO::LベLコEレーCTクスOタR
B：BASE
JEITA:SC-62
EJJEIAEDJDEEC: CS::CS-O6T2-89
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
VCBO Collector to Base voltage
RATING
80
UNIT
V
MARKING
Type Name
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
10 V
60 V
NP
I C Collector current
1A
I CM Peak collector current
2A
PCM Collector dissipation(Ta=25℃) 500 mW
Tj Junction temperature
Tstg Storage temperature
＋150
-55～＋150
℃
℃
The last number Marking month
of fisical year
Running No.
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN TYP MAX
UNIT
ICBO Collector cut off current
VCE=60V，IE=0
― ― 0.1 μA
VCE(sat) Collector to Emitter saturation voltage
IB=7mA，IC=0.7A
― ― 0.4
V
VI(off) Input off voltage
VCE=5V，IC=100μA
0.3 ―
―
V
ｈＦＥ1 DC forward current gain1
VCE=2V，IC=0.1A
200 ― ― ―
ｈＦＥ2 DC forward current gain2
VCE=2V，IC=0.5A
300 ― ― ―
ｈＦＥ3 DC forward current gain3
VCE=2V，IC=1A
200 ― ― ―
R2 Emitter-base resistor
―
7 10 13 ｋΩ
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet RTBN14BAP1.PDF ] | |
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