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RT3PFFM PDF даташит

Спецификация RT3PFFM изготовлена ​​​​«Isahaya Electronics Corporation» и имеет функцию, называемую «Transistor».

Детали детали

Номер произв RT3PFFM
Описание Transistor
Производители Isahaya Electronics Corporation
логотип Isahaya Electronics Corporation логотип 

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RT3PFFM Даташит, Описание, Даташиты
DESCRIPTION
RT3PFFM is composite transistor built with two
RT1P431 chips in SC-88 package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, Switching circuit,
Interface circuit, Driver circuit
RT3PFFM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
OUTLINE DRAWING
2.1
1.25
Unitmm
⑥⑤④
R1 R2
RTr1
RTr2
R2 R1
① ②③
TERMINAL
CONNECTOR
EMITTER1
BASE1
COLLECTOR2
EMITTER2
BASE2
COLLECTOR1
JEITASC-88
JEDEC:-
MAXIMUM RATING(Ta=25)(RTr1, RTr2 COMMON)
SYMBOL
VCBO
VEBO
VCEO
VIN
IC
ICM
PT
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input voltage
Collector current
Peak Collector current
Total dissipation
Junction temperature
Storage temperature
RATING
-50
-10
-50
-30
-100
-200
200
150
-55~+150
UNIT
V
V
V
V
mA
mA
mW
ELECTRICAL CHARACTERISTICS(Ta=25)(RTr1, RTr2 COMMON)
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Collector to Emitter breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
I C=-100µARBE=
VCB=-50VI E =0
VEB=-5VI C =0
VCE=-5VI C =-10mA
I C =-10mAI B =-0.5mA
VCE=-0.2VI C =-5mA
VCE=-5VI C =-100µA
VCE=-6VI E =10mA
MARKING
654
P. F F
123
MIN
-50
-399
20
-0.8
3.3
0.8
LIMITS
TYP
-532
-0.1
-1.4
-1.1
4.7
1.0
150
MAX
-0.1
-771
-0.3
-2.3
6.1
1.2
UNIT
V
µA
µA
V
V
V
k
MHz
ISAHAYA ELECTRONICS CORPORATION









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RT3PFFM Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS
(RTr1,RTr2 COMMON)
TOTAL DISSIPATION
VS AMBIENT TEMPERATURE
300
200
100
0
0 25 50 75 100 125
AMBIENT TEMPERATURE Ta (℃)
INPUT ON VOLTAGE
VS COLLECTOR CURRENT
-10
VCE=-0.2V
150
-1 Ta=85℃
Ta=25℃
Ta=-40℃
-0.1
-1
-10
COLLECTOR CURRENT IC(mA)
-100
COLLECTOR TO EMITTER SATURATION
VOLTAGE VS COLLECTOR CURRENT
-1
IC/IB=20/1
Ta=85℃
Ta=25℃
Ta=-40℃
-0.1
RT3PFFM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
1000
DC FORWARD CURRENT GAIN
VS COLLECTOR CURRENT
VCE=-5V
100
Ta=-40℃
10
Ta=25℃
Ta=85℃
1
-0.1
-1 -10
COLLECTOR CURRENT IC(mA)
-1000
COLLECTOR CURRENT
VS INPUT OFF VOLTAGE
VCE=-5V
-100
Ta=85℃
-100
Ta=25℃
Ta=-40℃
-10
-0
-0.5 -1 -1.5
INPUT OFF VOLTAGE VI(off) (V)
-2
-0.01
-1
-10
COLLECTOR CURRENT IC(mA)
-100
ISAHAYA ELECTRONICS CORPORATION









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RT3PFFM Даташит, Описание, Даташиты
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is
prohibited.
·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Jun.2014










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Номер в каталогеОписаниеПроизводители
RT3PFFMTransistorIsahaya Electronics Corporation
Isahaya Electronics Corporation

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