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PDF RT3PDDM Data sheet ( Hoja de datos )
| Número de pieza | RT3PDDM | |
| Descripción | Transistor | |
| Fabricantes | Isahaya Electronics Corporation | |
| Logotipo |  |
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DESCRIPTION
RT3PDDM is composite transistor built with two
RT1P237 chips in SC-88 package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, Switching circuit,
Interface circuit, Driver circuit
RT3PDDM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
OUTLINE DRAWING
2.1
1.25
①
②
③
⑥
⑤
④
Unit：mm
⑥⑤④
R1 R2
RTr1
RTr2
R2 R1
① ②③
電極接続
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥：COLLECTOR1
JEITA：SC-88
JEDEC：－
MAXIMUM RATING(Ta=25℃)(RTr1, RTr2 COMMON)
SYMBOL
VCBO
VEBO
VCEO
VIN
IC
ICM
PT
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input voltage
Collector current
Peak Collector current
Collector dissipation（Total）
Junction temperature
Storage temperature
RATING
-50
-6
-50
-12
-100
-200
150
＋150
-55～＋150
UNIT
V
V
V
V
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃)(RTr1, RTr2 COMMON)
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
I C=-100µA，RBE=∞
VCB=-50V，I E =0
VEB=-5V，I C =0
VCE=-5V，I C =-10mA
I C =-10mA，I B =-0.5mA
VCE=-0.2V，I C =-5mA
VCE=-5V，I C =-100µA
－
－
VCE=-6V，I E =10mA
MARKING
654
P. DD
１23
MIN
-50
－
-76
80
－
－
-0.5
1.5
17
－
LIMITS
TYP
－
－
-102
－
－
-0.7
-0.6
2.2
22
150
MAX
－
-0.1
-147
－
-0.3
-1.1
－
2.9
26
－
UNIT
V
µA
µA
－
V
V
V
kΩ
－
MHz
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet RT3PDDM.PDF ] | |
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