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RT3C99M PDF даташит

Спецификация RT3C99M изготовлена ​​​​«Isahaya Electronics Corporation» и имеет функцию, называемую «Silicon NPN Transistor».

Детали детали

Номер произв RT3C99M
Описание Silicon NPN Transistor
Производители Isahaya Electronics Corporation
логотип Isahaya Electronics Corporation логотип 

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RT3C99M Даташит, Описание, Даташиты
RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
DESCRIPTION
RT3C99M is a composite transistor built with two
2SC5938A chips in SC-88 package.
FEATURE
Silicon NPN epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
muting circuitswitching circuit
OUTLINE DRAWING
2.1
1.25
Unitmm
TERMINAL
CONNECTOR
①:EMITTER1
Tr1 ②:BASE1
③:COLLECTOR2
Tr2 ④:EMITTER2
⑤:BASE2
:COLLECTOR1
JEITASC-88
MAXIMUM RATING (Ta=25)
SYMBOL
VCBO
VEBO
VCEO
IC
PCTotal
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipationTa=25℃)
Junction temperature
Storage temperature
RATING
50
40
20
200
150
125
-55~+125
UNIT
V
V
V
mA
mW
MARKING
6 54
.C99
123
ISAHAYA ELECTRONICS CORPORATION









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RT3C99M Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol
Parameter
Test conditions
ICBO
Collector cut off current
IEBO
Emitter cut off current
hFE*
DC forward current gain
VCE(sat)
Collector to Emitter saturation voltage
fT Gain band width product
Cob Collector output capacitance
Ron Output On-resistance
* : It shows hFE classification in right table.
VCB =50V,IE=0
VEB=40V,IC=0
VCE=2V,IC=4mA
IC=30mA,IB=3mA
VCE=6V,IE=-4mA
VCB=10V,IE=0,f=1MHZ
IB=5mA, f=1MHz
RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
Limits
Unit
Min Typ Max
- - 0.1 μA
- - 0.1 μA
200
-
1200
-
- 30 - V
- 30 - MHZ
- 5.0 - pF
- 0.95 - Ω
Item
hFE
A
200700
B
3501200
TYPICAL CHARACTERISTICS (Tr1、Tr2)
COMMON EMITTER OUTPUT
60
Ta=25℃
50
40
30
300μA
250μA
200μA
150μA
20 100μA
10 IB=50μA
0
0 2 4 6 8 10
COLLECTOR TO EMITTER VOLTAGE VCE(V)
COMMON EMITTER TRANSFER
50
Ta=25℃
VCE=2V
40
30
20
10
0
0 0.2 0.4 0.6 0.8
BASE TO EMITTER VOLTAGE VBE(V)
1
ISAHAYA ELECTRONICS CORPORATION









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RT3C99M Даташит, Описание, Даташиты
10000
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
Ta=25℃
VCE=2V
1000
RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
DC REVERSE CURRENT GAIN
VS. COLLECTOR CURRENT
10000
Ta=25℃
VCE=-2V
1000
100 100
10
0.1
1 10
COLLECTOR CURRENT IC(mA)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
1000
Ta=25℃
IC/IB=10
100
100
10
1
0.1
0.1
1 10 100
COLLECTOR CURRENT IC(mA)
1000
GAIN BAND WIDTH PRODUCT VS.
EMITTER CURRENT
100
Ta= 2 5 ℃
V CE= 6 V
10
-0.1
-1 -10
COLLECTOR CURRENT IC(mA)
ON RESISTANCE VS. BASE CURRENT
10
Ta= 2 5 ℃
-100
1
0.1
0.1
1 10
BASE CURRENT IB(mA)
100
COLLECTOR OUTPUT CAPACITANCE
VS.COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
IE=0
f=1MHz
10
10
-0.1
-1 -10
EMITTER CURRENT IE(mA)
-100
1
0.1
1 10
COLLECTOR TO BASE VOLTAGE VCB(V)
100
ISAHAYA ELECTRONICS CORPORATION










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Номер в каталогеОписаниеПроизводители
RT3C99MSilicon NPN TransistorIsahaya Electronics Corporation
Isahaya Electronics Corporation

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