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C5012 PDF даташит

Спецификация C5012 изготовлена ​​​​«NEC» и имеет функцию, называемую «NPN Transistor - 2SC5012».

Детали детали

Номер произв C5012
Описание NPN Transistor - 2SC5012
Производители NEC
логотип NEC логотип 

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C5012 Даташит, Описание, Даташиты
DATA SHEET
SILICON TRANSISTOR
2SC5012
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Small Package
• High Gain Bandwidth Product (fT = 9 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
ORDERING INFORMATION
PART
NUMBER
2SC5012-T1
2SC5012-T2
QUANTITY
3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to
perforation side of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
* Please contact with responsible NEC person, if you require
evaluation sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC5012)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage
VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 65
Total Power Dissipation
PT 150
Junction Temperature
Tj 150
Storage Temperature
Tstg –65 to +150
V
V
V
mA
mW
˚C
˚C
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.2
1.25 ± 0.1
0.3
+0.1
–0.05
(LEADS 2, 3, 4)
23
0.4
+0.1
–0.05
1
4
0 to 0.1
0.15
+0.1
–0.05
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution; Electrostatic Sensitive Device.
Document No. P10400EJ2V0DS00 (2nd edition)
(Previous No. TD-2412)
Date Published July 1995 P
Printed in Japan
© 1993









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C5012 Даташит, Описание, Даташиты
2SC5012
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|2
NF
MIN.
50
13
TYP.
100
9.0
0.25
15
1.2
MAX.
1.0
1.0
250
0.8
2.5
UNIT
µA
µA
GHz
pF
dB
dB
TEST CONDITION
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 8 V, IC = 20 mA*1
VCE = 8 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz*2
VCE = 8 V, IC = 20 mA,f = 1.0 GHz
VCE = 8 V, IC = 7 mA,f = 1.0 GHz
*1 Pulse Measurement; PW 350 µs, Duty Cycle 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
Marking
hFE
EB
R36
50 to 100
FB
R37
80 to 160
GB
R38
125 to 250
2









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C5012 Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0 50 100 150
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
IB = 200 µA
180 µA
160 µA
20 140 µA
120 µA
100 µA
80 µA
10 60 µA
40 µA
20 µA
0 2 4 6 8 10 12
VCE - Collector to Emitter Voltage - V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
VCE = 8 V
f = 1 GHz
8
6
4
2
0
12
5 10 20
50 100
IC - Collector Current - mA
2SC5012
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 8 V
40
30
20
10
0 0.5 1.0
VBE - Base to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
VCE = 8 V
200
100
50
20
10
1
10
IC - Collector Current - mA
100
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
20
VCE = 8 V
f = 1 GHz
10
0
12
5 10 20
50 100
IC - Collector Current - mA
3










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