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2SJ650 функция - P-Channl Silicon MOSFET - ON Semiconductor

Номер произв 2SJ650
Описание P-Channl Silicon MOSFET
Производители ON Semiconductor 
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2SJ650 Даташит, Описание, Даташиты
2SJ650
Ordering number : ENN7500
2SJ650
P-Channl Silicon MOSFET
DC / DC Converter Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ650]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--12
--48
2.0
20
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J650
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--6A
min
--60
--1.2
7
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
10 S
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SJ650/D





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