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CPH3442 - Sanyo - N-Channel Silicon MOSFET

Номер произв CPH3442
Описание N-Channel Silicon MOSFET
Производители Sanyo
логотип Sanyo логотип 
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CPH3442 Даташит, Описание, Даташиты
Ordering number : ENA0094
CPH3442
CPH3442
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
30
±10
6.5
26
1.2
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : ZR
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=4V
ID=1.5A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
30
0.4
6
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.4 V
10 S
17 24 m
22 31 m
1295
pF
239 pF
183 pF
21 ns
85 ns
156 ns
125 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92005PE MS IM TB-00001598 No. A0094-1/4
--------------------------------------------

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CPH3442 Даташит, Описание, Даташиты
CPH3442
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=4V, ID=6.5A
VDS=10V, VGS=4V, ID=6.5A
VDS=10V, VGS=4V, ID=6.5A
IS=6.5A, VGS=0V
Ratings
min typ max
Unit
16.1
nC
2.8 nC
5.7 nC
0.82
1.2 V
Package Dimensions
unit : mm
7015-004
0.4
3
0.15
0.05
12
1.9
2.9
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=3A
RL=5
D VOUT
CPH3442
P.G 50S
ID -- VDS
6.5
6.0
5.5
VGS=1.5V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Drain-to-Source Voltage, VDS -- V IT10180
RDS(on) -- VGS
50
Ta=25°C
45
ID=1.5A 3.0A
40
35
30
25
20
15
10
5
02468
Gate-to-Source Voltage, VGS -- V IT10182
10
VDS=10V
9
ID -- VGS
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS -- V IT10181
RDS(on) -- Ta
45
40
35
30
25
20
IIDD==13.5.0AA, ,VVGGS=S=2.45.V0V
15
10
5
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10256
No. A0094-2/4
--------------------------------------------

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CPH3442 Даташит, Описание, Даташиты
CPH3442
3
2 VDS=10V
yfs-- ID
10
7
5
3
2
Ta=
--25°C
75°C
1.0
7
25°C
5
3
2
0.1
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain Current, ID -- A
IT10184
SW Time -- ID
5
VDD=15V
3 VGS=4V
2 td(off)
tf
100
7
5 tr
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
5
3
2
1000
7
5
IS -- VSD
VGS=0V
0.4 0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT10185
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
td(on)
2
10
0.1
23
4.0
VDS=10V
3.5 ID=6.5A
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT10308
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2 4 6 8 10 12 14 16 18
Total Gate Charge, Qg -- nC
IT10310
PD -- Ta
1.4
3
Coss
2
Crss
100
0
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT10309
ASO
5
3 IDP=26A
<10µs
2
10
7
ID=6.5A
1ms 100µs
5
3
2
1.0
7
5
3 Operation in this
DC
100ms
operation
10ms
2 area is limited by RDS(on).
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Drain-to-Source Voltage, VDS -- V IT10189
1.2
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10146
No. A0094-3/4
--------------------------------------------





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