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FCU4300N80Z Datasheet PDF Download - Fairchild Semiconductor

Номер произв FCU4300N80Z
Описание MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 
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FCU4300N80Z Даташит, Описание, Даташиты
December 2014
FCU4300N80Z
N-Channel SuperFET® II MOSFET
800 V, 1.6 A, 4.3
Features
• RDS(on) = 3.4 Typ.)
• Ultra Low Gate Charge (Typ. Qg = 6.8 nC)
• Low Eoss (Typ. 0.8 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 36 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress. Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCU4300N80Z Rev. C0
1
FCU4300N80Z
800
±20
±30
1.6
1.0
3.2
8.2
0.32
0.28
100
20
27.8
0.22
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCU4300N80Z
4.5
100
Unit
oC/W
www.fairchildsemi.com
--------------------------------------------

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FCU4300N80Z Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FCU4300N80Z
Top Mark
FCU430080Z
Package
IPAK
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
75 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
800
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 0.16 mA
VGS = 10 V, ID = 0.8 A
VDS = 20 V, ID = 0.8 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 1.6 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 1.6 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 1.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 1.6 A,
dIF/dt = 100 A/s
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 0.32 A, RG = 25 , starting TJ = 25C
3. ISD 1.6 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C
4. Essentially independent of operating temperature typical characteristic.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.85
-
-
-
-
3.4
0.52
267
12
0.78
6.2
36
6.8
1.38
3.0
2.9
10
6.5
21
16
-
-
-
209
1.2
Max.
-
-
25
250
±10
4.5
4.3
-
355
16
-
-
-
8.8
-
-
-
30
23
52
42
1.6
3.2
1.2
-
-
Unit
V
V/oC
A
A
V
S
pF
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
C
©2014 Fairchild Semiconductor Corporation
FCU4300N80Z Rev. C0
2
www.fairchildsemi.com
--------------------------------------------

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FCU4300N80Z Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
4
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
1
5.5V
5.0V
0.1
0.3
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1 10
VDS, Drain-Source Voltage[V]
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8
*Note: TC = 25oC
7
6
5 VGS = 10V
4
VGS = 20V
3
2
01234
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
1000
100
Ciss
10 *Note:
Coss
1. VGS = 0V
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 2. Transfer Characteristics
10
*Notes:
1. VDS = 20V
2. 250s Pulse Test
1
150oC
25oC
-55oC
0.1
2
3456
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
20
10 *Notes:
1. VGS = 0V
2. 250s Pulse Test
1
150oC
0.1
0.01
25oC
0.001
0.0
0.3 0.6 0.9 1.2
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
*Note: ID = 1.6A
8 VDS = 160V
VDS = 400V
6 VDS = 640V
4
2
00 2 4 6 8
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
FCU4300N80Z Rev. C0
3
www.fairchildsemi.com
--------------------------------------------





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