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FCD3400N80Z - Fairchild Semiconductor - MOSFET

Номер произв FCD3400N80Z
Описание MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 
предварительный просмотр
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FCD3400N80Z Даташит, Описание, Даташиты
March 2015
FCD3400N80Z / FCU3400N80Z
N-Channel SuperFET® II MOSFET
800 V, 2 A, 3.4 Ω
Features
• RDS(on) = 2.75 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 7.4 nC)
• Low Eoss (Typ. 0.9 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 41 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
D
G
S
D-PAK
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
1
S
FCD3400N80Z
FCU3400N80Z
800
±20
±30
2.0
1.2
4.0
12.8
0.4
0.32
100
20
32
0.26
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD3400N80Z
FCU3400N80Z
3.9
62.5
Unit
oC/W
www.fairchildsemi.com
--------------------------------------------

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FCD3400N80Z Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FCD3400N80Z
FCU3400N80Z
Top Mark
FCD340080Z
FCU340080Z
Package
DPAK
IPAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
75 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25°C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V,TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 0.2 mA
VGS = 10 V, ID = 1 A
VDS = 20 V, ID = 1 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 2 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
800
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 2 A,
VGS = 10 V, Rg = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 2 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 2 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 0.4 A, RG = 25 Ω, starting TJ = 25°C
3. ISD 2 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C
4. Essentially independent of operating temperature typical characteristic.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.9
-
-
-
-
2.75
2
299
12.7
0.36
6.2
41
7.4
1.6
3.1
3.2
10
6.4
22.7
14
-
-
-
119
868
Max.
-
-
25
250
±10
4.5
3.4
-
400
15
-
-
-
9.6
-
-
-
30
23
55
38
1.6
3.8
1.2
-
-
Unit
V
V/oC
μA
μA
V
Ω
S
pF
pF
pF
pF
pF
nC
nC
nC
Ω
ns
ns
ns
ns
A
A
V
ns
nC
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
2
www.fairchildsemi.com
--------------------------------------------

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FCD3400N80Z Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
5
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.3
1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
10
VDS, Drain-Source Voltage[V]
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6
*Note: TC = 25oC
5
4
VGS = 10V
3
VGS = 20V
2
1
01234
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
100 Ciss
Coss
10
1 *Note:
Crss
1. VGS = 0V
2. f = 1MHz
0.1
0.1 1 10 100
VDS, Drain-Source Voltage [V]
1000
Figure 2. Transfer Characteristics
10
150oC
25oC
1
-55oC
0.1
3
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
456
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10
150oC
1
25oC
0.1
0.01
0.2
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 160V
8 VDS = 400V
VDS = 640V
6
4
2
*Note: ID = 2A
0
02468
Qg, Total Gate Charge [nC]
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
3
www.fairchildsemi.com
--------------------------------------------





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