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FCD2250N80Z Datasheet PDF Download - Fairchild Semiconductor

Номер произв FCD2250N80Z
Описание MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 
предварительный просмотр
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FCD2250N80Z Даташит, Описание, Даташиты
December 2014
FCD2250N80Z
N-Channel SuperFET® II MOSFET
800 V, 2.6 A, 2.25
Features
• RDS(on) = 1.8 Typ.)
• Ultra Low Gate Charge (Typ. Qg = 11 nC)
• Low Eoss (Typ. 1.1 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switch-
ing power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCD2250N80Z Rev. C0
1
FCD2250N80Z
800
±20
±30
2.6
1.7
6.5
21.6
0.52
0.39
100
20
39
0.31
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD2250N80Z
3.2
100
Unit
oC/W
www.fairchildsemi.com
--------------------------------------------

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FCD2250N80Z Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FCD2250N80Z
Top Mark
FCD225080Z
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
800
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 0.26 mA
VGS = 10 V, ID = 1.3 A
VDS = 20 V, ID = 1.3 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 2.6 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 2.6 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 2.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 2.6 A,
dIF/dt = 100 A/s
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 0.52 A, RG = 25 , starting TJ = 25C
3. ISD 2.6 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C
4. Essentially independent of operating temperature typical characteristic.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.85
-
-
-
-
1.87
2.28
440
16
0.75
8.4
51
11
2.2
4.3
2.8
11
6.7
26
8.7
-
-
-
260
2.2
Max.
-
-
25
250
±10
4.5
2.25
-
585
22
-
-
-
14
-
-
-
32
23
62
27
2.6
6.5
1.2
-
-
Unit
V
V/oC
A
A
V
S
pF
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
C
©2014 Fairchild Semiconductor Corporation
FCD2250N80Z Rev. C0
2
www.fairchildsemi.com
--------------------------------------------

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FCD2250N80Z Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
0.1
1
10
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.6 *Note: TC = 25oC
3.0
2.4 VGS = 10V
1.8
VGS = 20V
1.2
0.0
1.2 2.4 3.6 4.8
ID, Drain Current [A]
6.0
Figure 5. Capacitance Characteristics
10000
1000
100
Ciss
10 *Note:
1. VGS = 0V
Coss
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1 10
Crss
100
VDS, Drain-Source Voltage [V]
1000
Figure 2. Transfer Characteristics
10
*Notes:
1. VDS = 20V
2. 250s Pulse Test
150oC
1
-55oC
25oC
0.1
2
3456
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
*Notes:
1. VGS = 0V
2. 250s Pulse Test
10
1
150oC
0.1
25oC
0.010.0
0.3 0.6 0.9 1.2
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
*Note: ID = 2.6A
VDS = 160V
8
VDS = 400V
6
VDS = 640V
4
2
0
0 3 6 9 12
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
FCD2250N80Z Rev. C0
3
www.fairchildsemi.com
--------------------------------------------





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