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FCD1300N80Z - Fairchild Semiconductor - MOSFET

Номер произв FCD1300N80Z
Описание MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 
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FCD1300N80Z Даташит, Описание, Даташиты
FCD1300N80Z
N-Channel SuperFET® II MOSFET
800 V, 4 A, 1.3
August 2014
Features
• RDS(on) = 1.05 Typ.)
• Ultra Low Gate Charge (Typ. Qg = 16.2 nC)
• Low Eoss (Typ. 1.57 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
• AC - DC Power Supply
• LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress.Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCD1300N80Z Rev. C0
1
FCD1300N80Z
800
±20
±30
4
2.5
12
48
0.8
0.26
100
20
52
0.42
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD1300N80Z
2.4
100
Unit
oC/W
www.fairchildsemi.com
--------------------------------------------

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FCD1300N80Z Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FCD1300N80Z
Top Mark
FCD130080Z
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
800
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 0.4 mA
VGS = 10 V, ID = 2 A
VDS = 20 V, ID = 2 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 4 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 4 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS
ISM
VSD
trr
Qrr
Notes:
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, ISD = 4 A
VGS = 0 V, ISD = 4 A,
dIF/dt = 100 A/s
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 0.8 A, RG = 25 , starting TJ = 25C
3. ISD 4 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C
4. Essentially independent of operating temperature typical characteristic.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.85
-
-
-
-
1.05
4.5
661
22.3
0.74
11.4
48.7
16.2
3.5
6.8
4
14
8.3
33
6
-
-
-
275
2.9
Max.
-
-
25
250
±10
4.5
1.3
-
880
30
-
-
-
21
-
-
-
38
27
76
22
4
12
1.2
-
-
Unit
V
V/oC
A
A
V
S
pF
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
C
©2014 Fairchild Semiconductor Corporation
FCD1300N80Z Rev. C0
2
www.fairchildsemi.com
--------------------------------------------

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FCD1300N80Z Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 20.0V
10
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.3
0.5
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1 10
VDS, Drain-Source Voltage[V]
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
2.0
1.5
VGS = 10V
VGS = 20V
1.0
0.5
0
*Note: TC = 25oC
2 4 6 8 10 12
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
30000
10000
1000
100
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
1 *Note:
1. VGS = 0V
2. f = 1MHz
0.1
0.1 1 10 100
VDS, Drain-Source Voltage [V]
1000
Figure 2. Transfer Characteristics
20
10
150oC
25oC
1
-55oC
0.1
3
*Notes:
1. VDS = 20V
2. 250s Pulse Test
456
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
20
10
150oC
1
0.1
25oC
0.01
0.001
0.0
*Notes:
1. VGS = 0V
2. 250s Pulse Test
0.4 0.8 1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 160V
8 VDS = 400V
VDS = 640V
6
4
2
*Note: ID = 4A
0
0 6 12 18
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
FCD1300N80Z Rev. C0
3
www.fairchildsemi.com
--------------------------------------------





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