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FCD850N80Z Datasheet PDF Download - Fairchild Semiconductor

Номер произв FCD850N80Z
Описание MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 
предварительный просмотр
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FCD850N80Z Даташит, Описание, Даташиты
October 2014
FCD850N80Z / FCU850N80Z
N-Channel SuperFET® II MOSFET
800 V, 6 A, 850 m
Features
• Typ. RDS(on) = 710 mTyp.)
• Ultra Low Gate Charge (Typ. Qg = 22 nC)
• Low Eoss (Typ. 2.3 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress.Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
D
G
S
D-PAK
G DS
Absolute Maximum Ratings TC=25oCunlessotherwisenoted.
I-PAK
G
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
1
S
FCD850N80Z
FCU850N80Z
800
±20
±30
6
3.8
18
114
1.2
0.284
100
20
75
0.6
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD850N80Z
FCU850N80Z
1.65
100
Unit
oC/W
www.fairchildsemi.com
--------------------------------------------

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FCD850N80Z Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FCD850N80Z
FCU850N80Z
Top Mark
FCD850N80Z
FCU850N80Z
Package
DPAK
IPAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
NA
Tape Width
16 mm
NA
Quantity
2500 units
75 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25C
ID = 1 mA, Referenced to 25oC
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 0.6 mA
VGS = 10 V, ID = 3 A
VDS = 20 V, ID = 3 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 640 V, ID = 6 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
800
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 400 V, ID = 6 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS
ISM
VSD
trr
Qrr
Notes:
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6 A
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, ISD = 6 A,
dIF/dt = 100 A/s
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 1.2 A, VDD 50 V, RG = 25 , Starting TJ = 25C
3. ISD 6 A, di/dt 200 A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
0.8
-
-
-
-
710
3.5
990
28
0.74
15
106
22
5
8.6
2.4
16
10
40
4.5
-
-
-
318
4.5
Max. Unit
-V
- V/oC
25
250
A
±10 A
4.5 V
850 m
-S
1315
37
-
-
-
29
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
42 ns
30 ns
90 ns
19 ns
6A
18 A
1.2 V
- ns
- C
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
2
www.fairchildsemi.com
--------------------------------------------

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FCD850N80Z Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 20.0V
10.0V
8.0V
10 7.0V
6.5V
6.0V
5.5V
Figure 2. Transfer Characteristics
20
*Notes:
1. VDS = 20V
2. 250s Pulse Test
10
150oC
25oC
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.50 *Note: TC = 25oC
1.25
1.00
VGS = 10V
0.75
VGS = 20V
0.50
0
3 6 9 12 15 18
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
1000
Ciss
100
Coss
10 *Note:
1. VGS = 0V
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1
10 100
VDS, Drain-Source Voltage [V]
1000
-55oC
1
4567
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
50
*Notes:
1. VGS = 0V
2. 250s Pulse Test
10
150oC
25oC
1
0.1 0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
*Note: ID = 6A
8 VDS = 160V
VDS = 400V
6 VDS = 640V
4
2
0
0 6 12 18 24
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
3
www.fairchildsemi.com
--------------------------------------------





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