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FDD5N60NZ - Fairchild Semiconductor - MOSFET

Номер произв FDD5N60NZ
Описание MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 
предварительный просмотр
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FDD5N60NZ Даташит, Описание, Даташиты
FDD5N60NZ
N-Channel UniFETTM II MOSFET
600 V, 4.0 A, 2 Ω
Features
• RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A
• Low Gate Charge (Typ. 10 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFETTM II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD5N60NZ
600
±25
4.0
2.4
16
216
4.0
8.3
10
83
0.7
-55 to +150
300
FDD5N60NZ
1.5
90
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDD5N60NZ Rev. C1
1
www.fairchildsemi.com
--------------------------------------------

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FDD5N60NZ Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FDD5N60NZTM
Top Mark
FDD5N60NZ
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±25 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 2.0 A
VDS = 20 V, ID = 2.0 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, ID = 4.0 A,
VGS = 10 V
(Note 4)
Min.
600
-
-
-
-
3.0
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.65
5
450
50
5
10
2.5
4
Max. Unit
-V
- V/oC
50
100
μA
±10 μA
5.0 V
2.00 Ω
-S
600 pF
65 pF
7.5 pF
13 nC
- nC
- nC
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250 V, ID = 4.0 A,
VGS = 10 V, RG = 25 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 4.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 4.0 A,
dIF/dt = 100 A/μs
(Note 4)
-
-
-
-
-
-
-
-
-
15 40 ns
20 50 ns
35 80 ns
20 50 ns
- 4.0 A
- 16 A
- 1.4 V
230 - ns
0.9 - μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 27 mH, IAS = 4.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 4.0 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2011 Fairchild Semiconductor Corporation
FDD5N60NZ Rev. C1
2
www.fairchildsemi.com
--------------------------------------------

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FDD5N60NZ Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS = 12.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
1
0.1
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.5
3.0
VGS = 10V
2.5
VGS = 20V
2.0
1.5 0
*Note: TC = 25oC
246
ID, Drain Current [A]
8
Figure 5. Capacitance Characteristics
1000
Ciss
Coss
100
*Note:
1. VGS = 0V
2. f = 1MHz
10 Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
Crss = Cgd
30.1
1
10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
20
*Notes:
10 1. VDS = 20V
2. 250μs Pulse Test
150oC
1 25oC
-55oC
0.1 2
468
VGS, Gate-Source Voltage[V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
30
10
150oC
25oC
1
0.1
0.2
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0
VSD, Body Diode Forward Voltage [V]
1.2
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 4A
0
0 2 4 6 8 10
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FDD5N60NZ Rev. C1
3
www.fairchildsemi.com
--------------------------------------------





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